Abstract

This paper investigates the enhancement of quantum tunneling probability in semiconductor heterostructures through the combined application of strain engineering and electric field modulation. We employ the transfer matrix method to model electron transport through a complex potential barrier system, incorporating the effects of strain-induced band structure modifications and external electric fields. Our simulations, based on realistic material parameters for GaAs/AlGaAs heterostructures, demonstrate a significant increase in tunneling probability compared to unstrained, field-free scenarios. We analyze the resonant tunneling behavior and explore the optimal conditions for achieving maximum transmission. The results highlight the potential of this approach for designing high-performance nanoscale electronic devices, such as resonant tunneling diodes and quantum well infrared photodetectors. The study provides valuable insights into manipulating quantum mechanical phenomena for advanced technological applications.